S-shaped ceramic feedthrough

ABSTRACT

An electrical interconnect has a non-planar ceramic substrate with opposing first and second ends. A first conductive layer having first and second opposing sides is disposed within the ceramic substrate with one of the first and second opposing sides exposed at the first end and one of the first and second opposing sides exposed at the second end. The electrical interconnect is useful to join an integrated circuit in a hybrid package to a circuit board in high frequency communication applications.

BACKGROUND

1. Field

The disclosure relates to a ceramic feedthrough for use in a highfrequency signal transmission device. More particularly, a striplinetransmission line is surrounded by a ceramic portion. This ceramicportion is then covered with a ground metallization.

2. Description of the Related Art

High frequency electronic packages are frequently hybrid packagescontaining a multiple devices. The hybrid package is solder attached toa circuit board for use in high data rate communication systems. Anumber of requirements are imposed on an interconnect that joins thehybrid package to the circuit board. First, the interconnect must becapable of transitioning the electrical signal from the location ofintegrated circuits inside the housing of the hybrid package to lowerlevels that make contact with the circuit board. The signal path fromthe integrated circuits to the circuit board must simultaneously providegood signal integrity, solderable connection to the circuit board andtransverse the requisite distance.

Second, the hybrid packages require electrical interconnects withperformance that is effective over a very wide frequency bandwidth,nominally from 0 to 50 GHz or even 80 GHz. This wide band performance isrequired to maintain signal integrity of the information carried alongthe electrical interconnects. If the signal integrity is not maintained,then the information carried along the electrical interconnects willbecome unusable and the information could be lost.

Third, the interconnects must be compatible with the solder used toattach to circuit boards using standard surface mount methods. Solderattach is important because it offers the board level system integratorflexibility in processes and a capability to use low cost manufacturingprocesses.

To demonstrate the importance of signal integrity, consider the effectof poorly performing interconnects. The effect may be illustrated by eyeperformance results from the signal passing through the electricalinterconnect. In telecommunications, an eye diagram is an oscilloscopedisplay that shows a digital data signal that is repetitively sampled.It is called an eye diagram because, for several types of coding, thepattern looks like a series of eyes between a pair of rails. It is anempirical method used for the evaluation of combined effects. It iscommonly used for high speed communication signals as an indication ofthe quality of the signal. For interconnects, the eye diagram showsundesired effects within the interconnects that will degrade the signalperformance.

Several signal performance measures can be derived by analyzing the eyediagram. If the signals are too long, too short, poorly synchronizedwith the system clock, too high, too low, too noisy, too slow to change,or have too much undershoot or overshoot, this can be observed from aneye diagram. An open eye pattern corresponds to minimal signaldistortion. Distortion of the signal waveform due to intersymbolinterference and noise appears as closure of the eye pattern. Anexemplary eye diagram with good performance is illustrated in FIG. 1.The eye 2 has symmetry and is uniform in shape.

The eye diagram illustrated in FIG. 2 shows the effect of transmissionline dispersion, an electrical interconnect effect that degrades eyeperformance. Dispersion causes the transmission line propagationconstant to be non-linear with frequency and line impedance to change asa function of frequency. The eye 4 lacks symmetry and is not uniform inshape. Other effects that degrade eye diagram performance include astray inductive or capacitive parasitic as part of the electricalinterconnect.

One prior high speed interconnect is a metal box with high qualitycoaxial connectors. The connectors are approximately 0.5 inch×0.5inch×0.25 inch and require coaxial cable for connection. While theseconnections are capable of providing high quality interconnectperformance over a very broad frequency range, they are not surfacemountable. The connectors are too large to effectively integrate with acompact telecommunications equipment box.

A high speed interconnect is disclosed in U.S. Pat. No. 8,933,450,titled “High-Frequency Transmitting Device,” by Okumichi et al., that isincorporated by reference herein in its entirety. FIGS. 1A-1D of U.S.Pat. No. 8,933,450 illustrate a microstrip or coplanar waveguidetransmission line forming a vertical transition from a top layer to abottom layer. This approach utilizes a coaxial section that allowstransition of the electrical signal from a layer with integratedcircuits down to a layer that contacts with a circuit board. The coaxialsection is formed using a center conductor via and a series of vias thatform an electrical ground contact. This permits the signal to travelover transmission lines that are matched or nearly matched to therequired system impedance, that is normally 50 ohms. A drawback withthis approach is that it requires the electrical system to make anabrupt 90° bend in at least two locations which degrades electricalperformance. The 90° bends occur at transition points at the top and atthe bottom of the ceramic stack. One attempt at addressing this drawbackis to use a stair-stepped via structure as mention in U.S. Pat. No.8,933,450. This approach adds additional transition discontinuitieswhich must be compensated and degrade electrical performance. Anotherdrawback is that it requires a transition from co-planar waveguide(CPW), or microstrip, transmission line to coaxial transmission at twolocations. This transition further degrades the electrical performancebecause the electric field distributions are so different betweenhorizontal CPW or microstrip and the vertical coaxial line.

BRIEF SUMMARY OF THE DISCLOSURE

An electrical interconnect has a non-planar ceramic substrate withopposing first and second ends. A first conductive layer having firstand second opposing sides is disposed within the ceramic substrate withone of the first and second opposing sides exposed at the first end andone of the first and second opposing sides exposed at the second end.The electrical interconnect is useful to join an integrated circuit in ahybrid package to a circuit board in high frequency communicationapplications.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is an eye diagram illustrating good performance by an electricalinterconnect.

FIG. 2 is an eye diagram illustrating poor performance by an electricalinterconnect.

FIG. 3 is a cross-sectional view of an S-shaped ceramic feedthrough asdisclosed herein.

FIG. 4 is a sectional view of a first embodiment of the S-shaped ceramicfeedthrough of FIG. 3.

FIG. 5 is a sectional view of a second embodiment of the S-shapedceramic feedthrough of FIG. 3.

FIG. 6 is a sectional view of a third embodiment of the S-shaped ceramicfeedthrough of FIG. 3.

FIG. 7 schematically illustrates coupled transmission lines for use witha first amplifier circuit.

FIG. 8 schematically illustrates coupled transmission lines for use witha second amplifier circuit.

FIG. 9 shows a first process step used for the manufacture of theS-shaped ceramic feedthrough of FIG. 3.

FIG. 10 shows a second process step used for the manufacture of theS-shaped ceramic feedthrough of FIG. 3.

FIG. 11 shows a third process step used for the manufacture of theS-shaped ceramic feedthrough of FIG. 3.

Like reference numbers and designations in the various drawingsindicated like elements.

DETAILED DESCRIPTION

An electrical interconnect with the exemplary shape of an S-shapedceramic feedthrough 10 is illustrated in cross-sectional representationin FIG. 3. The S-shaped ceramic feedthrough 10 has a non-planar ceramicsubstrate portion that provides structural support. This ceramic portionincludes a first layer 12 and a second layer 14 fused together asdescribed hereinbelow. The fused first layer 12 and second layer 14 areS-shaped, with a first radius of curvature 15 about equal to a secondradius of curvature 17, to smoothly transition an electrical signal froma package connect portion 16 to a board connect portion 18. Disposedbetween the first layer 12 and the second layer 14 is an electricallyconductive stripline 20. A first microstrip 22 extends from stripline 20and is supported by the package connect portion 16 of the first layer 12and is for electrical interconnection to integrated circuits containedin a hybrid package, such as by wire bonding 27. An opposing secondmicrostrip 24 extends from stripline 20 and is supported by the boardconnect portion 18 of the second layer 14 and is for electricalinterconnection to a circuit board or similar structure. The firstmicrostrip 22 and the second microstrip 24 are essentially co-planar asindicated by projection lines 19, 21 and approximately perpendicular tomid-portion 23 as indicated by projection line 25. A metallic lead 26 ora solder ball (not shown) may facilitate electrical interconnectionbetween the second microstrip 24 and the circuit board. A groundmetallization 28, 30 coats exterior surfaces of the fused first layer 12and second layer 14 of the ceramic section.

The first microstrip 22 is supported by the first layer 12 of theceramic portion. This provides a rigid surface for wirebonding tointegrated circuits within the hybrid package housing. The groundmetallization 28, 30 provides isolation to minimize electrical signalradiation to other circuits and provides a ground reference for thetransmission lines. The ground metallization 28, 30 also provides asurface for brazing to the metal housing of the hybrid package whichresults in a hermetic seal. The shaped lead 26 at the second microstrip24 of the S-shaped ceramic feedthrough 10 provides a solderable surfacefor connection to a circuit board and a stress relief between theceramic-based feedthrough 10 and, for example, a polymer-based printedcircuit board. The first microstrip 22 is a matched transmission linewith an electric field that is compatible with the stripline 20 and inthe same plane, due to the smooth transition bend.

Particularly beneficial is the way that the high speed electrical pathtransitions from the microstrip level 22 to the circuit board connectionpoint 24. The transition is implemented based on the use of a striplinetransmission line. The transmission line is one continuous piece ofstripline in ceramic that is formed, prior to final ceramic firing, intothe shape required to transport the electrical signal. In this way, thetransition avoids the use of vertical vias and abrupt signal transitionsthat are characteristic of some prior implementations.

The first microstrip 22 has a section of microstrip line that makescontact to integrated circuits. The second microstrip 24 has an attachedlead 26 that makes contact between a circuit board and the S-shapedceramic feedthrough 10. Disposed between the first microstrip 22 and thesecond microstrip 24 is a section of continuous stripline transmissionline 20 that is formed into the required shape. Because cofired ceramicmaterial is not rigid and is formable prior to final firing, the ceramicfeedthrough can be bent into a desired shape to realize the transition.All of the transmission lines are optimized for 50 ohms, or otherrequired system impedance, so that the electrical signal maintains highquality. The ceramic that surrounds the stripline transmission linesection 20 is covered with ground metallization. With reference to FIG.6, there may be vias 32 connecting the ground metallization 28 on thetop side with the ground metallization 30 on the bottom side. The vias32 contact the ground metallization 28, 30 that is on the top side andon the bottom side of the ceramic. The vias 32 are useful because theymaintain electrical connection between the ground metallizations 28, 30to avoid higher mode propagation.

The transmission stripline 20 within the S-shaped ceramic feedthroughmay be multiple transmission lines or coupled transmission lines. FIGS.4-6 show the ceramic feed through in cross-sectional view along thereference line (A-A) in FIG. 3. FIG. 4 illustrates a single stripline20. FIG. 5 illustrates two striplines 20, 20′. When there are multipletransmission lines, the vias 32 contacting the top metallization 28 andthe bottom metallization 30 have the additional function of providingelectrical signal isolation between the separate transmission striplines20, 20′. Undesired coupling between circuits occurs when there iscapacitive or inductive energy transfer and can have a detrimentaleffect on signal integrity. At lower frequencies, coupling betweentransmission lines is treated as an effect that is linear with frequencyand with the length of the line. At lower frequencies, this is aperfectly valid approach to within a few percent for many transmissionlines. A more accurate approach is to approximate the coupled lines as acapacitance that is proportional to the length of the transmissionlines. However, as frequency increases, the coupling betweentransmission lines can no longer be approximated by linear function ormodeled with a simple capacitor, instead, they are modeled as coupledtransmission lines. When the coupling is undesired, then the isolationvias 32 between the transmission striplines 20, 20′ eliminates (orminimizes) the capacitive coupling between transmission lines. Althoughonly two transmission striplines are shown in FIG. 5, it is possible forin excess of two transmission striplines to be within the samestructure, either side by side or stacked within the ceramic.

An alternative, illustrated in FIG. 6, is coupled transmissionstriplines 20, 20′. Coupled transmission striplines are useful incertain applications that require coupled differential transmissionlines to maintain signal integrity. There are many reasons that coupledtransmission lines are used. One example is when the transmissionstriplines 20, 20′ terminate into amplifiers 36 that requiredifferential signals. One method to model the coupled striplines 20, 20′is to use even and odd mode impedances. The ceramic transition can beused to realize coupled transmission lines 20, 20′ that are importantfor these types of circuits. With reference to FIG. 7:Z _(even)=∞

With reference to FIG. 8:

-   (1) even mode impedance matching    R _(B) =Z _(even)-   (2) odd mode impedance matching    R _(B) |R _(A)/2=Z _(odd)    (Z _(even) ·R _(A))/(2Z _(even) +R _(A))=Z _(odd)    ∴R _(A)=(2Z _(even) ·Z _(odd))/(Z _(even) −Z _(odd))

FIG. 9 shows a first process step used for the manufacture of theS-shaped ceramic feedthrough. A first ceramic substrate 40 is a greencompact of a ceramic material. A green compact means that the ceramichas been pressed together, but has not yet been fired. It is thereforeflexible and may be formed without falling apart. A suitable ceramic ischaracterized by its ability to support the mechanical demands, abilityto be formed in the green (unfired) state, ability to be fired(sintered) into a homogeneous (or nearly homogeneous) piece, and itscompatibility for high frequency electrical signal transport whichincludes appropriate dielectric constant. One suitable ceramic has acomposition, by weight, of 90%-95% aluminum oxide (High TemperatureCofired Ceramic technology). However, other glass and ceramiccomposition may be used (i.e. Low Temperature Cofired Ceramictechnology). Conductive striplines 42 are placed on the first ceramicsubstrate. The number of striplines 42 and their spacing is dependent ofthe lead configuration of the finished feedthrough.

As a second process step, as shown in FIG. 10, A second ceramicsubstrate 44, also a green compact of the ceramic material is placedover the striplines 42 and pressed to abut the first ceramic substrate40. The first 40 and second 44 ceramic substrates are sized and alignedto form the respective first microstrip 22 and second microstrip 24 (asseen in FIG. 3).

As a third process step, as shown in FIG. 11, The structure formed bythe combination of the first ceramic substrate and the second ceramicsubstrate is placed in a mold and formed to a desired shape withtransition 46 having appropriate curves at top and bottom andmid-portion of a desired length. Because the ceramic substrates aregreen compacts at this point, accurate control over curves and lengthsis readily achieved. The structure is then fired to fused the ceramiccomponents. A typical heat cycle for sintering a High TemperatureCofired Ceramic is heating to a temperature of from 1400° C. to 1600° C.for a time of from 30 minutes to 6 hours in a hydrogen-nitrogen(reducing) atmosphere or in a vacuum and then cooling to roomtemperature. A typical heat cycle for sintering a Low TemperatureCofired Ceramic is heating to a temperature of from 400° C. to 850° C.in an air (oxidizing) atmosphere or a time of from 10 minutes to onehour and then cooling back to room temperature. The fused structure isthen sanded and polished along the direction of arrows 48 and then cutalong lines 50 to complete the S-shaped ceramic feedthrough.

One or more embodiments of the present invention have been described.Nevertheless, it will be understood that various modifications may bemade without departing from the spirit and scope of the invention. Forexample, the ceramic piece may be bent upward from the package to form atransition that makes contact to a motherboard on the opposite side ofthe package. This approach is useful in cases where the thermal path ofthe electronics and the electronic signal path are on opposite sides ofthe package. Another example is where the electrical signal willtransition from one layer of the metal package to a separate signallayer within the package. In this modification to the invention, thetransition allows high quality signal transmission within a metalpackage when the electronics inside the package are at different levels.Another modification is when the transition is used to transition to theexternal portion of the metal package, but rather than at the edge ofthe package, the transition can occur at an internal portion of thepackage allowing the external signal to exit the package withoutextending the package foot print. This approach may be useful in caseswhere a very compact package size is required. Accordingly, otherembodiments are within the scope of the following claims.

What is claimed is:
 1. An electrical interconnect, comprising: anon-planar ceramic substrate having coplanar opposing first and secondends with opposing first and second surfaces of the non-planar ceramicsubstrate coated with respective first and second conductive material; afirst conductive layer having first and second opposing sides disposedwithin the ceramic substrate with one of said first and second opposingsides exposed at said first end and one of said first and secondopposing sides exposed at said second end; one or more additionalconductive layers, that are coplanar with said first conductive layerdisposed within the ceramic substrate each of said one or moreadditional conductive layers also having one of a first and a secondopposing sides exposed at said first end and one of said first and saidsecond opposing sides exposed at said second end; and a plurality ofelectrically conductive vias extending from said first conductivematerial to said second conductive such that an electrically conductivevia extends along two opposing edges of each of said conductive layerand said one of more additional conductive layers.
 2. The electricalinterconnect of claim 1 wherein a mid-portion of said non-planar ceramicsubstrate is approximately perpendicular to both said first end and saidsecond end.
 3. An electrical interconnect, comprising: a non-planarceramic substrate having coplanar opposing first and second ends withopposing first and second surfaces of the non-planar ceramic substratecoated with respective first and second conductive material; a firstconductive layer having first and second opposing sides disposed withinthe ceramic substrate with one of said first and second opposing sidesexposed at said first end and one of said first and second opposingsides exposed at said second end; one or more additional conductivelayers, that are coplanar with said first conductive layer disposedwithin the ceramic substrate each of said one or more additionalconductive layers also having one of a first and a second opposing sidesexposed at said first end and one of said first and said second opposingsides exposed at said second end; and a plurality of electricallyconductive vias extending from said first conductive material to saidsecond conductive material such that an electrically conductive viaextends along one edge of said conductive layer and one edge of one ofsaid one of more additional conductive layers with no electricallyconductive via disposed between said conductive layer and an adjacentone of said one of more additional conductive layers.
 4. An electricalinterconnect, comprising: a non-planar ceramic substrate having coplanaropposing first and second ends with opposing first and second surfacesof the non-planar ceramic substrate coated with respective first andsecond conductive material; a first conductive layer having first andsecond opposing sides disposed within the ceramic substrate with saidfirst side exposed at said first end and said second opposing sideexposed at said opposing second end; one or more additional conductivelayers, that are coplanar with said first conductive layer disposedwithin the ceramic substrate each of said one or more additionalconductive layers also having a first side exposed at said first end anda second opposing side exposed at said second end; and an electricalinterconnection effective to electrically interconnect said electricalconductor to an integrated circuit bonded to said first opposing side ofsaid first conductive layer.
 5. A process for the manufacture of theelectrical interconnect of claim 4, comprising the steps of: a)providing a first green ceramic compact and disposing a plurality ofelectrically conductive strips on said green ceramic compact, saidplurality of electrically conductive strips being parallel to each otherand electrically isolated from each other; b) placing a second greenceramic compact on to a surface of said first green ceramic compact withsaid plurality of electrically conductive strips disposed there betweenwith one of a first opposing side of said plurality of electricallyconductive strips being supported by said first green ceramic compactand not covered by said second green ceramic compact and a secondopposing side of said plurality of electrically conductive strips beingsupported by said second green compact and not covered by said firstgreen compact; c) shaping an assembly formed in step (b) to a desiredshape; and d) heating said assembly to a temperature and for a timeeffective to fuse said first green compact to said second green compact.6. The process of claim 5 including, prior to step (d), depositing afirst metallic layer on an exterior surface of said first and a secondmetallic layer on an exterior surface of said second green compact. 7.The process of claim 6 including forming one or more electricallyconductive vias to extend from said first metallic layer to said secondmetallic layer.
 8. The process of claim 6 including, in step (c),shaping said assembly such that said first opposing side of saidplurality of electrically conductive strips is coplanar with said secondopposing side of said plurality of electrically conductive strips. 9.The process of claim 8 including, in step (c), shaping said assemblysuch that a mid-portion of said plurality of electrically conductivestrips is approximately perpendicular to said first opposing side ofsaid plurality of electrically conductive strips is coplanar with saidsecond opposing side of said plurality of electrically conductivestrips.
 10. The process of claim 9 including, in step (c), shaping saidassembly such that a radius of curvature between said mid-portion ofsaid plurality of electrically conductive strips and said first opposingside of said plurality of electrically conductive strips isapproximately equal to a radius of curvature between said mid-portion ofsaid electrically conductive strips and said second opposing side ofsaid plurality of electrically conductive strips.
 11. The electricalinterconnect of claim 4 wherein a conductive material effective toelectrically interconnect said electrical conductor to a circuit boardis bonded to said second opposing side of said first conductive layer.12. The electrical interconnect of claim 11 wherein a radius ofcurvature between said first end and said mid-portion of said non-planarceramic substrate is about equal to a radius of curvature between saidmid-portion and said second end of said non-planar ceramic substrate.13. The process of claim 6 wherein said heating step includes heating toa temperature of between 1400° C. and 1600° C. for a time of between 30minutes and 6 hours in a reducing atmosphere.
 14. The process of claim 6wherein said heating step includes heating to a temperature of between400° C. and 850° C. for a time of between 10 minutes and one hour in anoxidizing atmosphere.
 15. The electrical interconnect of claim 4 whereinthe electrical interconnection is a wire bond.